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IGBT with Diode
Short Circuit SOA Capability
IXSN 80N60BD1 VCES IC25 VCE(sat) tfi
C G E
= = = =
600 V 160 A 2.5 V 180 ns
Preliminary Data Sheet
E
Symbol V CES V CGR V GES VGEM IC25 IL IC90 I CM SSOA (RBSOA) t SC (SCSOA) PC V ISOL TJ T JM T stg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (Silicon chip capability) Lead current limit (RMS) TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 5 Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125C RG = 22 , non repetitive TC = 25C 50/60 Hz IISOL 1 mA t = 1 min t=1s
Maximum Ratings 600 600 20 30 160 100 80 300 ICM = 160 @ 0.8 VCES 10 420 2500 3000 -55 ... +150 150 -55 ... +150 V A V V
miniBLOC, SOT-227 B E153432
E G
E
A A A A A s W V~ V~ C C C g
C E = Emitter G = Gate, , C = Collector E = Emitter
Either Emitter terminal can be used as Main or Kelvin Emitter
Mounting torque
0.4/6 Nm/lb.in. 30
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 8 200 2 200 2.5 V V A mA nA V
Features International standard package Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ UL registered E 153432 Low VCE(sat) - for minimum on-state conduction losses Fast Recovery Epitaxial Diode - short trr and IRM Low collector-to-case capacitance (< 60 pF) - reduced RFI Low package inductance (< 10 nH) - easy to drive and to protect Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Space savings Easy to mount with 2 screws High power density
B V CES V GE(th) I CES I GES VCE(sat)
IC IC
= 500 A, VGE = 0 V = 8 mA, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC
= IC90, VGE = 15 V; Note 1
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2004 IXYS All rights reserved
DS98890A(05/04)
IXSN 80N60BD1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 52 6600 VCE = 25 V, VGE = 0 V, f = 1 MHz 720 196 200 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = 2.7 Note 2 70 60 60 50 140 120 1.8 Inductive load, T J = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = 2.7 Note 2 60 60 4.8 190 160 3.3 280 200 3.5 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.30 K/W 0.05 K/W
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
gfs C ies Coes C res Qg Qge Qgc t d(on) t ri t d(off) tfi Eoff t d(on) t ri E on t d(off) tfi Eoff R thJC R thCK
IC = 60 A; VCE = 10 V, Note1
M4 screws (4x) supplied
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions IF = 60 A, Note 1 TJ = 150C
Characteristic Values (T J = 25C, unless otherwise specified) typ. max. 2.05 1.4 8.0 35 V V A ns 0.85 K/W
IF = IC90, VGE = 0 V, -diF/dt = 100 A/s V R = 100 V, TJ = 100C IF = 1 A, -di/dt = 50 A/s, VR = 30 V
Note: 1. Pulse test, t 300 s, duty cycle d 2% Note: 2. Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXSN 80N60BD1
Fig. 1. Output Characte ristics @ 25 Deg. C
80 70 60 300 VGE = 17V 15V 13V 11V 270 240 210 VGE = 17V 15V 13V
Fig. 2. Extended Output Characte ristics @ 25 de g. C
I C - Amperes
50 40 30 20 10 7V 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 9V
I C - Amperes
180 150 120 90 60 30 0
11V
9V 7V
0
1
2
3
V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C
80 70 60 VGE = 17V 15V 13V 11V 1.6 1.5 VGE = 15V
V C E - Volts
4
5
6
7
8
9
Fig. 4. De pende nce of V CE(sat) on Tem perature
I C = 160A
V C E (sat)- Normalized
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 I C = 40A I C = 80A
I C - Amperes
50 40 30 20 7V 10 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 9V
-50
-25
0
25
50
75
100
125
150
V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs . Gate-to-Em iiter voltage
10 9 8 TJ = 25C 320 280 240
TJ - Degrees Centigrade Fig. 6. Input Adm ittance
I C - Amperes
VC E - Volts
7 6 5 4 3 2 6 7 8 9 10
I C = 160A 80A 40A
200 160 120 80 40 0 TJ = 125C 25C -40C
11
12
13
14
15
16
17
5
6
7
8
9
10
11
12
13
V G E - Volts
V G E - Volts
(c) 2004 IXYS All rights reserved
IXSN 80N60BD1
Fig. 8. Dependence of Turn-off Energy Loss on RG
14 12 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 2 4 6 8 10 I C = 40A 12 14 16 I C = 80A TJ = 125C VGE = 15V VCE = 480V
Fig. 7. Transconductance
90 80 70 TJ = -40C 25C 125C
I C = 160A
g f s - Siemens
60 50 40 30 20 10 0
I C - Amperes Fig. 9. Dependence of Turn-Off Energy Loss on IC
11 10 9 R G = 2.7 R G = 10 - - - VGE = 15V VCE = 480V
E off - milliJoules
R G - Ohms Fig. 10. Dependence of Turn-off Energy Loss on Tem perature
11 10 9 R G = 2.7 R G = 10 - - - VGE = 15V VCE = 480V
I C = 160A
E off - MilliJoules
7 6 5 4 3 2 1 0 40 60 80
TJ = 125C
E off - milliJoules
8
8 7 6 5 4 3 2 1 0
TJ = 25C
I C = 80A
I C = 40A 25 35 45 55 65 75 85 95 105 115 125
I C - Amperes
100
120
140
160
TJ - Degrees Centigrade Fig. 12. Dependence of Turn-off Sw itching Tim e on IC
275 250 225 200 175 150 125 100 75 TJ = 25C
Fig. 11. Dependence of Turn-off Sw itching Tim e on RG
325 300 275 250 225 200 175 150 125 100 75 0 2 4 6 I C = 40A I C = 80A I C = 160A
Switching Time - nanoseconds
Switching Time - nanoseconds
td(off) tfi - - - - - R G = 2.7 VGE = 15V VCE = 480V
TJ = 125C
td(off) tfi - - - - - TJ = 125C VGE = 15V VCE = 480V
R G - Ohms
8
10
12
14
16
18
40
60
80
100
120
140
160
I C - Amperes
4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592
IXSN 80N60BD1
Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature
300 275 250 225 200 175 150 125 100 75 25 35 45 55 65 75 85 95 105 115 125 I C = 160A 0 0 20 40 60 80 100 120 140 160 180 200 I C = 80A I C = 40A
Fig. 14. Gate Charge
15 VCE = 300V IC = 80A IG = 1 0mA
Switching Time - nanoseconds
td(off) tfi - - - - - R G = 2.7 VGE = 15V VCE = 480V
I C = 160A 12
VG E - Volts
9
6
3
TJ - Degrees Centigrade Fig. 15. Capacitance
10000 f = 1 MHz C ies
Q G - nanoCoulombs
Capacitance - p F
1000
C oes 100 C res
10 0 5 10 15
V C E - Volts
20
25
30
35
40
Fig. 16. Maxim um Transient Therm al Resistance
1.0
R (th) J C - (C/W)
0.1
0.0 1 10
Pulse Width - milliseconds
100
1000
(c) 2004 IXYS All rights reserved
IXSN 80N60BD1
160 A 140 IF 120 100 80 60 40 20 0 0 1 VF 2 V 0 100 A/s 1000 -diF/dt 0 0 200 400 600 A/s 1000 800 -diF/dt 4000 nC
TVJ= 100C VR = 300V
80 A
TVJ= 100C VR = 300V
TVJ= 25C TVJ=100C
3000 Qr 2000
IF=120A IF= 60A IF= 30A
60 IRM 40
TVJ=150C
1000 20
IF=120A IF= 60A IF= 30A
Fig. 17. Forward current IF versus VF
Fig. 18. Reverse recovery charge Qr versus -diF/dt
140 ns 130
Fig. 19. Peak reverse current IRM versus -diF/dt
20 V VFR 15 1.6 s tfr
2.0
TVJ= 100C VR = 300V
1.5 Kf 1.0
trr 120 110
IRM
100 0.5
IF=120A IF= 60A IF= 30A
tfr
10
VFR
1.2
0.8
Qr
5 90 80 0
0.4
0.0
TVJ= 100C IF = 60A
0 200 400
0
40
80
120 C 160 TVJ
0
200
400
600 -diF/dt
800 A/s 1000
0.0 600 A/s 1000 800 diF/dt
Fig. 20. Dynamic parameters Qr, IRM versus TVJ
1 K/W 0.1 ZthJC 0.01
Fig. 21. Recovery time trr versus -diF/dt
Fig. 22. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 Rthi (K/W) 0.3073 0.3533 0.0887 0.1008 ti (s) 0.0055 0.0092 0.0007 0.0399
0.001
0.0001 0.00001
DSEP 2x61-06A
0.0001
0.001
0.01
0.1
s t
1
Fig. 7
Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344

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